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BCM62B
PNP/PNP matched double transistor
Rev. 01 -- 19 September 2006 Product data sheet
1. Product profile
1.1 General description
PNP/PNP matched double transistor in a SOT143B small Surface-Mounted Device (SMD) plastic package. Matched version of BCV62. NPN/NPN equivalent: BCM61B.
1.2 Features
I Current gain matching
1.3 Applications
I Current mirror I Differential amplifier
1.4 Quick reference data
Table 1. Symbol VCEO hFE Quick reference data Parameter collector-emitter voltage DC current gain Conditions open base VCE = -5 V; IC = -2 mA Min 200 Typ 290 Max -45 450 Unit V
Per transistor TR1
Per transistor IC Per device IC1/IE2 current matching VCE1 = -5 V; IE2 = 0.5 mA; Tamb 25 C
[1]
collector current
1
1.1
-100 1.2
mA
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
DataSheet 4 U .com
Philips Semiconductors
BCM62B
PNP/PNP matched double transistor
2. Pinning information
Table 2. Pin 1 2 3 4 Pinning Description collector TR2, base TR1 and TR2 collector TR1 emitter TR1 emitter TR2
1 2 1 2
006aaa843
Simplified outline
4 3
Symbol
4 3
TR2
TR1
3. Ordering information
Table 3. Ordering information Package Name BCM62B Description plastic surface-mounted package; 4 leads Version SOT143B Type number
4. Marking
Table 4. BCM62B
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking codes Marking code[1] *AD
Type number
BCM62B_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 19 September 2006
2 of 13
Philips Semiconductors
BCM62B
PNP/PNP matched double transistor
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBS IC ICM Ptot Per device Ptot Tj Tamb Tstg
[1]
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current total power dissipation total power dissipation junction temperature ambient temperature storage temperature
Conditions open emitter open base VCB = 0 V single pulse; tp 1 ms Tamb 25 C Tamb 25 C
[1]
Min -65 -65
Max -50 -45 -5 -100 -200 220 390 150 +150 +150
Unit V V V mA mA mW mW C C C
Per transistor TR1
Per transistor
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Per device Rth(j-a)
[1]
Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to ambient Conditions in free air
[1]
Min -
Typ -
Max 568
Unit K/W
Per transistor
in free air
[1]
-
-
321
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BCM62B_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 19 September 2006
3 of 13
Philips Semiconductors
BCM62B
PNP/PNP matched double transistor
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current Conditions VCB = -30 V; IE = 0 A VCB = -30 V; IE = 0 A; Tj = 150 C IEBO hFE emitter-base cut-off current DC current gain VEB = -5 V; IC = 0 A VCE = -5 V; IC = -10 A VCE = -5 V; IC = -100 A VCE = -5 V; IC = -2 mA VCEsat collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA VBEsat base-emitter saturation IC = -10 mA; voltage IB = -0.5 mA IC = -100 mA; IB = -5 mA VBE base-emitter voltage VCE = -5 V; IC = -2 mA VCE = -5 V; IC = -10 mA Cc collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz VCE = -5 V; IC = -0.2 mA; RS = 2 k; f = 10 Hz to 15.7 kHz VCE = -5 V; IC = -0.2 mA; RS = 2 k; f = 1 kHz; B = 200 Hz
BCM62B_1
Min -
Typ -
Max -15 -5
Unit nA A
Per transistor TR1
100 200 [1]
250 290 -50 -200 -760 -920 -650 -
-100 450 -200 -400 -700 -760 2.2
nA
mV mV mV mV mV mV pF
-600 -
[1]
[2]
[2]
Ce
emitter capacitance
-
10
-
pF
fT
transition frequency
100
175
-
MHz
NF
noise figure
-
1.6
-
dB
-
3.1
-
dB
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 19 September 2006
4 of 13
Philips Semiconductors
BCM62B
PNP/PNP matched double transistor
Table 7. Characteristics ...continued Tamb = 25 C unless otherwise specified. Symbol VEBS Parameter emitter-base voltage Conditions VCB = 0 V; IE = 250 mA VCB = 0 V; IE = 10 A Per device IC1/IE2 current matching VCE1 = -5 V; IE2 = 0.5 mA; Tamb 25 C VCE1 = -5 V; IE2 = 0.5 mA; Tamb 150 C VCE1 = -3 V; IE2 = 0.5 mA; Tamb 25 C VCE1 = -1 V; IE2 = 0.5 mA; Tamb 25 C
[1] [2] [3]
[3]
Min 400
Typ -
Max 1.5 -
Unit V mV
Per transistor TR2
1
1.1
1.2
[3]
1.02
-
1.22
[3]
0.95
1.05
1.15
[3]
0.9
1
1.1
VBEsat decreases by about 1.7 mV/K with increasing temperature. VBE decreases by about 2 mV/K with increasing temperature. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BCM62B_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 19 September 2006
5 of 13
Philips Semiconductors
BCM62B
PNP/PNP matched double transistor
-0.20 IC (A) -0.16
006aaa832
IB (mA) = -2.5 -2.25 -2
600 hFE
(1)
006aaa833
-1.75 -1.5 -1.25 -1
400
(2)
-0.12
-0.75 -0.5 200 -0.25
-0.08
(3)
-0.04
0 0
-2
-4
-6
-8 -10 VCE (V)
0 -10-2
-10-1
-1
-10
-102 -103 IC (mA)
Tamb = 25 C
VCE = -5 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 1. Collector current as a function of collector-emitter voltage; typical values
-1.3 VBEsat (V) -0.9
006aaa834
Fig 2. DC current gain as a function of collector current; typical values
-10 VCEsat (V) -1
006aaa835
(1) (2) (3)
-0.5
-10-1
(1) (2) (3)
-0.1 -10-1
-1
-10
-102 IC (mA)
-103
-10-2 -10-1
-1
-10
-102 IC (mA)
-103
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 3. Base-emitter saturation voltage as a function of collector current; typical values
Fig 4. Collector-emitter saturation voltage as a function of collector current; typical values
BCM62B_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 19 September 2006
6 of 13
Philips Semiconductors
BCM62B
PNP/PNP matched double transistor
-1.0 VBE (V) -0.8
006aaa836
103
006aaa837
fT (MHz)
102
-0.6
-0.4 -10-1
-1
-10
-102 IC (mA)
-103
10
-1
-10 IC (mA)
-102
VCE = -5 V; Tamb = 25 C
VCE = -5 V; Tamb = 25 C
Fig 5. Base-emitter voltage as a function of collector current; typical values
7 Cc (pF) 5
006aaa838
Fig 6. Transition frequency as a function of collector current; typical values
15 Ce (pF) 13
006aaa839
11
9 3 7
1 0
-2
-4
-6
-8 -10 VCB (V)
5 0
-2
-4 VEB (V)
-6
f = 1 MHz; Tamb = 25 C
f = 1 MHz; Tamb = 25 C
Fig 7. Collector capacitance as a function of collector-base voltage; typical values
Fig 8. Emitter capacitance as a function of emitter-base voltage; typical values
BCM62B_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 19 September 2006
7 of 13
Philips Semiconductors
BCM62B
PNP/PNP matched double transistor
1.5 IC1/IE2
006aaa840
1.3
(1)
(2)
1.1
(3)
0.9 -10-1
-1
-10 IE2 (mA)
-102
(1) VCE1 = -5 V (2) VCE1 = -3 V (3) VCE1 = -1 V
Fig 9. Current matching as a function of emitter current 2; typical values
8. Test information
A
IC1 -VCE1
2
TR1
1
TR2 IE2 = constant
3
4
006aaa841
Fig 10. Test circuit current matching
BCM62B_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 19 September 2006
8 of 13
Philips Semiconductors
BCM62B
PNP/PNP matched double transistor
9. Package outline
3.0 2.8 1.9 4 3 0.45 0.15
1.1 0.9
2.5 2.1
1.4 1.2
1 0.88 0.78 1.7 Dimensions in mm
2 0.48 0.38 0.15 0.09
04-11-16
Fig 11. Package outline SOT143B
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package BCM62B
[1]
Description
Packing quantity 3000 10000 -235 -215
SOT143B 4 mm pitch, 8 mm tape and reel
For further information and the availability of packing methods, see Section 14.
BCM62B_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 19 September 2006
9 of 13
Philips Semiconductors
BCM62B
PNP/PNP matched double transistor
11. Soldering
3.25 0.60 (3x) 0.50 (3x) solder lands 0.60 (4x) 4 2.70 1 2 3 1.30 3.00 occupied area solder paste solder resist
msa441
0.90 1.00 2.50
Dimensions in mm
Fig 12. Reflow soldering footprint SOT143B
4.45 1.20 (3x) solder lands solder resist occupied area
4
3
1.15 4.00 4.60
1
2 preferred transport direction during soldering
1.00 3.40
MSA422
Dimensions in mm
Fig 13. Wave soldering footprint SOT143B
BCM62B_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 19 September 2006
10 of 13
Philips Semiconductors
BCM62B
PNP/PNP matched double transistor
12. Revision history
Table 9. Revision history Release date 20060919 Data sheet status Product data sheet Change notice Supersedes Document ID BCM62B_1
BCM62B_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 19 September 2006
11 of 13
Philips Semiconductors
BCM62B
PNP/PNP matched double transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BCM62B_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 19 September 2006
12 of 13
Philips Semiconductors
BCM62B
PNP/PNP matched double transistor
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 19 September 2006 Document identifier: BCM62B_1

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